Notification:
We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Simulation, design, and fabrication of thin-film resistive-gate GaAs charge coupled devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ula, N. ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Davis, CA, USA ; Cooper, G. ; Davidson, C. ; Swierkowski, S.P.
more authors

Computer simulation of high-speed-gallium-arsenide charge coupled devices (CCDs) is performed using an established two-dimensional semiconductor device simulation program. The effect of active layer thickness on the charge transfer efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibility with GaAs MESFET technology. Both capacitive gate CCD and resistive gate CCD are considered. It is shown that both dynamic range and, to a greater extent, CTE, decrease with decreasing active layer thickness. In general, thicker active layer CCDs have a higher dynamic range and faster operating frequencies.<>

Published in:

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Date of Conference:

9-12 Dec. 1990