By Topic

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET for high current drivability and threshold voltage controllability

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Okumura, Y. ; Mitsubishi Electr. Corp., Hyogo, Japan ; Shirahata, M. ; Okudaira, T. ; Hachisuka, A.
more authors

A novel source-to-drain nonuniformly doped channel (NUDC) MOSFET was investigated theoretically and experimentally. Using an analytical model, it is verified that the mobility of the NUDC MOSFET is increased as compared with that of the conventional channel MOSFET. Also, the V/sub th/ lowering of the NUDC MOSFET is suppressed as compared with that of the conventional channel MOSFET. The NUDC MOSFET was fabricated by the oblique rotating ion implantation technique, and the theoretical predictions were confirmed experimentally.<>

Published in:

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Date of Conference:

9-12 Dec. 1990