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Non-equilibrium diffusion process modeling based on three-dimensional simulator and a regulated point-defect injection experiment

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6 Author(s)
Okada, T.K. ; Toshiba Corp., Kawasaki, Japan ; Kambayashi, S. ; Onga, S. ; Mizushima, I.
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Presents two novel sophisticated experimental procedures for precise estimation of Si interstitial and vacancy diffusion coefficients, supported with a result from a three-dimensional process simulation system. One is impurity profile monitoring under well-controlled injected flux of point defects in three dimensional space, while the other one is in-situ TEM (transmission electron microscope) observation of the regrowth region damaged with Si ion-implantation. The authors also present a proposal for nonequilibrium Si self-diffusion process modeling based on these results. Application of the model to the ULSI process design phase is discussed.<>

Published in:

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Date of Conference:

9-12 Dec. 1990