Referenced Items are not available for this document.
Presents two novel sophisticated experimental procedures for precise estimation of Si interstitial and vacancy diffusion coefficients, supported with a result from a three-dimensional process simulation system. One is impurity profile monitoring under well-controlled injected flux of point defects in three dimensional space, while the other one is in-situ TEM (transmission electron microscope) observation of the regrowth region damaged with Si ion-implantation. The authors also present a proposal for nonequilibrium Si self-diffusion process modeling based on these results. Application of the model to the ULSI process design phase is discussed.<
Published in:
Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International
Date of Conference: 9-12 Dec. 1990
- Page(s):
- 733 - 736
- Meeting Date :
- 09 Dec 1990-12 Dec 1990
- ISSN :
- 0163-1918
- INSPEC Accession Number:
- 4127281
- Conference Location :
- San Francisco, CA, USA
- Digital Object Identifier :
- 10.1109/IEDM.1990.237096
- Product Type:
- Conference Publications
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