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Monte Carlo simulation of ion implantation into single-crystal silicon including new models for electronic stopping and cumulative damage

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3 Author(s)
Klein, K.M. ; Microelectron. Res. Center, Texas Univ., Austin, TX, USA ; Park, C. ; Tasch, A.F.

The authors have developed a substantially improved physically based model for boron implantation into single-crystal silicon based on the Monte Carlo code MARLOWE. This model accounts for all relevant implant parameters and incorporates a local electron concentration-dependent electronic stopping model and a cumulative damage model. Good agreement with experimental profiles is obtained not only as a function of energy but also as a function of tilt angle, rotation (twist) angle, and dose.<>

Published in:

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Date of Conference:

9-12 Dec. 1990