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MOSFET hot-electron gate current calculation by combining energy transport method with Monte Carlo simulation

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4 Author(s)
Wang, S.-L. ; Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA ; Goldsman, N. ; Henrickson, L. ; Frey, J.

The authors describe a novel technique, which combines the attributes of the energy transport and Monte Carlo (ET-MC) methods, for determining MOSFET gate current that arises from electron heating in the device. This method is based upon a non-Maxwellian hot-electron distribution function found from Monte Carlo simulation, and utilizes a physically calculated average electron energy. Calculated values for gate current of a sample submicron MOSFET device show reasonably good agreement with experiment without the need for any fitting parameters. The method allows for excellent resolution of the high-energy tail of the distribution function. Furthermore, the ET-MC model requires less CPU time than standard MC methods, and is therefore appropriate for use in the computer-aided design of semiconductor devices, especially after establishing a database of distribution functions.<>

Published in:

Electron Devices Meeting, 1990. IEDM '90. Technical Digest., International

Date of Conference:

9-12 Dec. 1990