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Drift leakage current in AlGaInP quantum-well lasers

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5 Author(s)
Bour, D.P. ; Xerox Palo Alto Res. Center, CA, USA ; Treat, David W. ; Thornton, R.L. ; Geels, Randall S.
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The temperature dependence of threshold current and quantum efficiency for GaxIn1-xP (x=0.4, 0.6; λ=680, 633 nm) single 80-Å quantum-well lasers is compared and analyzed using a model for the electron leakage current. This model fits the experimental data well, correctly describing the rapid increase in threshold and drop in quantum efficiency as temperature increases. Also, it indicates that the drift (rather than diffusion) component of the electron leakage current, is dominant, because of the poor p-type conductivity in AlGaInP

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 5 )

Date of Publication:

May 1993

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