Cart (Loading....) | Create Account
Close category search window
 

Vertical InP pin diode made by MeV energy Si implantation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Nadella, R.K. ; Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA ; Vellanki, J. ; Rao, M.V.

To evaluate the potential of high-energy Si implantation in InP:Fe, the authors have fabricated a vertical p-i-n diode which is useful for high-power microwave switching. For high-power microwave switching, p-i-n diodes are preferred over FETs for their higher breakdown voltage, lower on-state resistance and lower off-state capacitance. Though a lateral structure is more convenient for monolithic integration, the vertical structure led to a better performance of epitaxially grown GaAs p-i-n diodes. A vertical p-i-n structure is preferable over a lateral structure due to the excessive surface conduction in the latter. Using epitaxially grown vertical GaAs p-i-n diodes, monolithic circuits like the 5-b phase shifter, the SP16T switch, and the variable attenuation limiter have been fabricated. Recently, using megaelectronvolt Si/S and kiloelectronvolt energy Be/P co-implantation in SI GaAs, vertical GaAs p-i-n diodes with favorable characteristics have been made.<>

Published in:

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Date of Conference:

21-24 April 1992

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.