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Vertical InP pin diode made by MeV energy Si implantation

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3 Author(s)
Nadella, R.K. ; Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA ; Vellanki, J. ; Rao, M.V.

To evaluate the potential of high-energy Si implantation in InP:Fe, the authors have fabricated a vertical p-i-n diode which is useful for high-power microwave switching. For high-power microwave switching, p-i-n diodes are preferred over FETs for their higher breakdown voltage, lower on-state resistance and lower off-state capacitance. Though a lateral structure is more convenient for monolithic integration, the vertical structure led to a better performance of epitaxially grown GaAs p-i-n diodes. A vertical p-i-n structure is preferable over a lateral structure due to the excessive surface conduction in the latter. Using epitaxially grown vertical GaAs p-i-n diodes, monolithic circuits like the 5-b phase shifter, the SP16T switch, and the variable attenuation limiter have been fabricated. Recently, using megaelectronvolt Si/S and kiloelectronvolt energy Be/P co-implantation in SI GaAs, vertical GaAs p-i-n diodes with favorable characteristics have been made.<>

Published in:

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Date of Conference:

21-24 April 1992

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