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Photoluminescence probing of InGaAs-InAl(Ga)As multiquantum well structures: a correlation to laser diode thresholds

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5 Author(s)
Rao, E.V.K. ; Lab. de Bagneux, CNET, France ; Quillec, M. ; Harmand, J.C. ; Sermage, B.
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Summary form only given. The photoluminescence (PL) properties of molecular-beam-epitaxy-grown InGaAs-InAl(Ga)As quantum well structures have been investigated. The ultimate aim of this work is to establish a workable relationship between PL efficiency and the MQW (multiquantum well) laser diode thresholds. To this end three types of samples have been analyzed: SQWs (single quantum wells) of nominal thickness approximately 30, approximately 60, and approximately 90 AA and located at different depths with varied buffer layer (InAlAs or InAlGaAs) thicknesses; MQWs identical to laser structures but without the top p-confinement layer; and complete MQW laser structures with grown-in p-n junction. The benefits of some specified heat treatments to improve the PL quality of the laser structures are presented and discussed.<>

Published in:
Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Date of Conference: 21-24 April 1992

Meeting Date :
21 Apr 1992-24 Apr 1992
Print ISBN:
0-7803-0522-1
INSPEC Accession Number:
4459400
Conference Location :
Newport, RI, USA
Digital Object Identifier :
10.1109/ICIPRM.1992.235620
Product Type:
Conference Publications

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