Scheduled System Maintenance:
On May 6th, single article purchases and IEEE account management will be unavailable from 8:00 AM - 5:00 PM ET (12:00 - 21:00 UTC). We apologize for the inconvenience.
By Topic

Lateral bandgap engineering for InP-based photonic integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Coudenys, G. ; Interuniv. Microelectron. Centre, Gent Univ., Belgium ; Moerman, I. ; Zhu, Y. ; Van Daele, P.
more authors

It is demonstrated that both SMG (shadow masked growth) and SG (selective growth) together with the use of QWs (quantum wells) can change the bandgap of InP-based materials laterally over the substrate. The thickness change that can be obtained with both techniques and the corresponding deviation from stoichiometry are competitive. The authors present the basic principle of both techniques and the basic characteristics (thickness and composition change). They have fabricated a multiwavelength laser array using SMG with a wavelength span of 130 nm around 1550 nm.<>

Published in:

Indium Phosphide and Related Materials, 1992., Fourth International Conference on

Date of Conference:

21-24 April 1992