By Topic

A high-density dual-polysilicon 5 volt-only EEPROM cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

A novel full-function EEPROM cell structure is described. The cell uses two polysilicon layers, a unique sublithographic poly-poly corner contact, and compact isolation to achieve good endurance, cell current, and capacitive coupling ratios in a scaleable and relatively self-aligned technology. Both program and erase operations are done using Fowler-Nordheim tunneling between the first and second poly layers. A single 5-V supply is required for operation. The cell size is 23 mu m/sup 2/ using 0.9- mu m minimum design rules. Full array functionality has been demonstrated on a 1 Mb EEPROM. In addition, a 15- mu m/sup 2/ version of the cell, suitable for a 4 Mb EEPROM, was fabricated using 0.7- mu m minimum design rules and was shown to be functional. Test structures show endurance of better than 1 million cycles.<>

Published in:

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference:

8-11 Dec. 1991