Cart (Loading....) | Create Account
Close category search window
 

An advanced 0.4 mu m BiCMOS technology for high performance ASIC applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)

An advanced 0.4 mu m BiCMOS technology has been developed for high-performance ASIC (application-specific integrated circuit) applications. The technology consists of a core 3.3 V CMOS process featuring 0.4 mu m effective channel lengths into which a high-performance n-p-n device module has been integrated. The ECL (emitter coupled logic) circuits are designed to operate with a conventional supply voltage of 5.2 V while the CMOS circuits are powered from an internally regulated 3.3 V supply. The n-p-n device features trench isolation and a self-aligned polysilicon emitter-base structure with a 0.4 mu m final emitter width. A peak Ft of 20 GHz and a minimum ECL delay of 41 ps at Ig=300 mu A have been achieved. This technology features silicided polysilicon local interconnection and up to 4 layers of metallization. A 51 mu m/sup 2/ 6T CMOS SRAM cell is available for applications requiring embedded SRAM.<>

Published in:

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference:

8-11 Dec. 1991

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.