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High mobility poly-Si TFT by a new excimer laser annealing method for large area electronics

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10 Author(s)
H. Kuriyama ; Sanyo Electric Co. Ltd., Osaka, Japan ; S. Kiyama ; S. Noguchi ; T. Kuwahara
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A high-mobility (280 cm/sup 2//V-s), high-throughput poly-Si TFT (thin-film transistor) formed using a low-temperature process (>

Published in:

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference:

8-11 Dec. 1991