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An improved analytical LDD-MOSFET model for digital and analog circuit simulation for all channel lengths down to deep-submicron

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1 Author(s)
Lemaitre, B. ; Siemens AG, Munchen, Germany

An improved analytical LDD (lightly doped drain)-MOSFET model for digital and analog circuit simulation in the deep-submicron region is described. This model includes all short and narrow channel effects and a substrate current model. Special emphasis was placed on the voltage-dependent effective channel length and series resistance of LDD devices. The voltage-dependent channel length and series resistance of LDD devices are measured electrically, verified with capacitance measurements, and introduced into the model.<>

Published in:
Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference: 8-11 Dec. 1991

Page(s):
333 - 336
Meeting Date :
08 Dec 1991-11 Dec 1991
ISSN :
0163-1918
Print ISBN:
0-7803-0243-5
INSPEC Accession Number:
4367833
Conference Location :
Washington, DC, USA
Digital Object Identifier :
10.1109/IEDM.1991.235385
Product Type:
Conference Publications

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