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MICROX-an advanced silicon technology for microwave circuits up to X-band

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10 Author(s)
Agarwal, A.K. ; Westinghouse Science & Technology Center, Pittsburgh, PA, USA ; Driver, M.C. ; Hanes, M.H. ; Hobgood, H.M.
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An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids currently used in systems up to X-band. The technology involves high-resistivity substrates. SIMOX (separation by implanted oxygen) processing, metal reinforced wide (100- mu m) by very short (0.3-0.5- mu m) polysilicon gates with multiple fingers, air-bridge technology, and other techniques to improve the high-speed performance by reducing parasitic elements and maintaining the substrate resistivity during the fabrication process. The technology has resulted in n-channel device cut-off frequencies (f/sub max/) of 21 GHz, with 40-GHz capability predicted by modeling.<>

Published in:

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference:

8-11 Dec. 1991