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Optoelectronic integrated circuit grown on Si using selective regrowth by MOCVD

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3 Author(s)
Egawa, T. ; Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan ; Jimbo, T. ; Umeno, M.

The authors report the first fabrication of a monolithically integrated AlGaAs/GaAs laser and GaAs MESFET grown on a GaAs/Si substrate using selective regrowth by MOCVD (metal-organic chemical vapor deposition). The schematic cross-sectional structure of monolithic integration of AlGaAs/GaAs laser and GaAs MESFET on a GaAs/Si substrate grown at 750 degrees C by MOCVD is shown. The drain I-V characteristic of the selective-regrown MESFET is also shown together with the drain I-V characteristic of the MESFET which is connected in series with the laser. This new type of OEIC (optoelectronic integrated circuit) is very promising in future applications such as optical interconnection.<>

Published in:

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference:

8-11 Dec. 1991