By Topic

Optoelectronic integrated circuit grown on Si using selective regrowth by MOCVD

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
T. Egawa ; Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan ; T. Jimbo ; M. Umeno

The authors report the first fabrication of a monolithically integrated AlGaAs/GaAs laser and GaAs MESFET grown on a GaAs/Si substrate using selective regrowth by MOCVD (metal-organic chemical vapor deposition). The schematic cross-sectional structure of monolithic integration of AlGaAs/GaAs laser and GaAs MESFET on a GaAs/Si substrate grown at 750 degrees C by MOCVD is shown. The drain I-V characteristic of the selective-regrown MESFET is also shown together with the drain I-V characteristic of the MESFET which is connected in series with the laser. This new type of OEIC (optoelectronic integrated circuit) is very promising in future applications such as optical interconnection.<>

Published in:

Electron Devices Meeting, 1991. IEDM '91. Technical Digest., International

Date of Conference:

8-11 Dec. 1991