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Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE

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6 Author(s)

Ga0.86In0.14As0.19Sb0.87 /Ga0.79 Al0.27As0.02Sb0.98 2.2-μm lasers grown by liquid-phase epitaxy (LPE) with the lowest threshold current density to date are reported. Using transverse far-field patterns and theoretical calculations for the fundamental mode, the value of the active layer refractive index is estimated as 3.78. It is shown that the development of low-threshold-current stripe lasers is limited by an excessive current spread in the low-resistivity p-type active layer. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layers was 290 mA compared to 800 mA for p-type active layers, the broad-area threshold current being the same (3 kA/cm2) in both cases

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )

Date of Publication:

Jun 1993

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