Cart (Loading....) | Create Account
Close category search window
 

Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)

Ga0.86In0.14As0.19Sb0.87 /Ga0.79 Al0.27As0.02Sb0.98 2.2-μm lasers grown by liquid-phase epitaxy (LPE) with the lowest threshold current density to date are reported. Using transverse far-field patterns and theoretical calculations for the fundamental mode, the value of the active layer refractive index is estimated as 3.78. It is shown that the development of low-threshold-current stripe lasers is limited by an excessive current spread in the low-resistivity p-type active layer. This is partly solved by making the active region n-type. The minimum Ith obtained for n-type active layers was 290 mA compared to 800 mA for p-type active layers, the broad-area threshold current being the same (3 kA/cm2) in both cases

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )

Date of Publication:

Jun 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.