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CBE grown 1.5 μm GaInAsP-InP surface emitting lasers

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6 Author(s)
Uchida, T. ; Tokyo Inst. of Technol., Yokohama, Japan ; Miyamoto, T. ; Yokouchi, N. ; Inaba, Y.
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GaInAsP-InP surface-emitting (SE) lasers have been fabricated using chemical beam epitaxy (CBE) and their lasing characteristics investigated. A threshold current of 2.6 mA was obtained under 77 K CW operation for a device with an improved GaInAsP contact layer having 0.1-μm thickness and relatively low hole concentration (1x1019 cm-3) to reduce the optical loss. A hybrid mirror consisting of a semiconductor distributed Bragg reflector (DBR) and Si-SiO2 multilayers is introduced. Threshold current as low as 1.7 mA was obtained at 77 K CW operation, the lowest values at 77 K for long-wavelength SE lasers ever reported. Near-room-temperature pulsed operation was also obtained for both structures

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Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )