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Low-threshold strained GaInP quantum-well ridge lasers with AlGaAs cladding layers

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5 Author(s)
Unger, P. ; Zurich Res. Lab., Ruschlikon, Switzerland ; Bona, Gian-Luca ; Germann, R. ; Roentgen, P.
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Visible lasers with two strained GaInP quantum wells and AlGaAs cladding layers have been fabricated using metalorganic vapor phase epitaxy. A dry-etched surface ridge has been chosen as a device structure, which results in a small astigmatism and a low threshold current. Owing to an electroplated heat spreader on top of the ridge, the devices can be operated continuous-wave (CW) junction-side-up at temperatures up to 100°C. Lasers mounted junction-side-down with coated mirror facets operating at 30 mW output power show single-mode behavior and good reliability, as proven by a lifetime test of over 3000 h

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )

Date of Publication:

Jun 1993

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