Referenced Items are not available for this document.
Fundamental-transverse-mode high-power CW operation over 150 mW has been realized in AlGaInP/GaInP 670-nm window laser diodes. A window structure of Zn-induced-disordered GaInP has been fabricated by solid phase diffusion using ZnO film. A compressively strained double-quantum-well active layer and a multiple quantum barrier (MQB) also have been employed for reduction of threshold current. Stable CW operation beyond 1500 h has been observed under 50 mW at 50°C
Published in:
Quantum Electronics, IEEE Journal of
(Volume:29
,
Issue:
6
)
Date of Publication: Jun 1993
- Page(s):
- 1874 - 1879
- ISSN :
- 0018-9197
- INSPEC Accession Number:
- 4561773
- Digital Object Identifier :
- 10.1109/3.234447
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Jun 1993
- Sponsored by :
- IEEE Photonics Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
