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High temperature (74°C) CW operation of 634 nm InGaAlP laser diodes utilizing a multiple quantum barrier

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4 Author(s)
Rennie, John ; Toshiba Corp., Kawasaki, Japan ; Okajima, M. ; Watanabe, M. ; Hatakoshi, G.

A modified multiple-quantum-barrier structure has been applied to a 630-nm-band laser diode. The result is a laser exhibiting a maximum operating temperature of 74°C and a threshold current of 49 mA. These characteristics correspond to a 22°C increase in the operating temperature and over a 50% decrease in the threshold current, in comparison to an identical laser without a multiple quantum barrier. This is the first time, to the authors' knowledge, that a significant decrease in the threshold current of a laser has been directly attributed to the influence of a multiple quantum barrier

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )