By Topic

30-mW 690-nm high-power strained-quantum-well AlGaInP laser

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)

A high-power 690-nm AlGaInP laser for use in a high-density rewritable-optical-disk memory system is presented. The deterioration of its temperature characteristics, which results from the high-power-oriented laser structure, is improved by using compressively strained GaInP quantum wells as the active layer. Output power of 40 mW is achieved up to 80°C. Stable fundamental-transverse-mode operation is obtained up to 50 mW. Output-power-induced facet degradation is suppressed by an Al2O3 facet coating. The lasers operate stably at 30 mW at 50°C for over 2600 h. The mean extrapolated lifetime is 10000 h

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )