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AlGaInP strained multiple-quantum-well visible laser diodes (λL⩽630 nm band) with a multiquantum barrier grown on misoriented substrates

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6 Author(s)
Hamada, Hiroki ; SANYO Electric Co. Ltd., Osaka, Japan ; Hiroyama, R. ; Honda, S. ; Shono, M.
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Optimization of the misorientation angle of GaAs substrates to prepare multiple quantum wells (MQWS) and multiple quantum barriers (MQBs) with abrupt barrier-well interfaces is reported. The characteristics of AlGaInP strained MQW laser diodes incorporating an MQB grown on misoriented substrates are also investigated, with the aim of developing high-performance 630-nm laser diodes. MQW and MQB with homogeneous periodicity and abrupt barrier-well interfaces were obtained using (100)GaAs substrates with a misorientation of 9° in the [011] direction. AlGaInP compressively strained MQW laser diodes which incorporated an MQB oscillating in the 630-nm band showed a maximum operating temperature (Tmax) 30°C higher than that for laser diodes without an MQB. Those diodes have been operating reliably for more than 3000 h under 5 mW at 50°C. Threshold current of 115 mA at 20°C was achieved for laser diodes oscillating at 615 nm

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )

Date of Publication:

Jun 1993

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