By Topic

AlGaInP strained multiple-quantum-well visible laser diodes (λL⩽630 nm band) with a multiquantum barrier grown on misoriented substrates

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Hamada, Hiroki ; SANYO Electric Co. Ltd., Osaka, Japan ; Hiroyama, R. ; Honda, S. ; Shono, M.
more authors

Optimization of the misorientation angle of GaAs substrates to prepare multiple quantum wells (MQWS) and multiple quantum barriers (MQBs) with abrupt barrier-well interfaces is reported. The characteristics of AlGaInP strained MQW laser diodes incorporating an MQB grown on misoriented substrates are also investigated, with the aim of developing high-performance 630-nm laser diodes. MQW and MQB with homogeneous periodicity and abrupt barrier-well interfaces were obtained using (100)GaAs substrates with a misorientation of 9° in the [011] direction. AlGaInP compressively strained MQW laser diodes which incorporated an MQB oscillating in the 630-nm band showed a maximum operating temperature (Tmax) 30°C higher than that for laser diodes without an MQB. Those diodes have been operating reliably for more than 3000 h under 5 mW at 50°C. Threshold current of 115 mA at 20°C was achieved for laser diodes oscillating at 615 nm

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )