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All-optical modulation for semiconductor lasers by using three energy levels in n-doped quantum wells

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5 Author(s)
Noda, S. ; Dept. of Electr. Eng., Kyoto Univ., Japan ; Yamashita, Takao ; Ohya, Masaki ; Muromoto, Y.
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An all-optical modulation method for semiconductor lasers using three energy levels in n-doped quantum wells is demonstrated. The modulation principle is based on the third-order interaction between interband-and intersubband-resonant light in the quantum-well structure. The modulation is demonstrated by a real-time single-shot experiment using a semiconductor laser for the interband-resonant light and a CO 2 laser for the intersubband-resonant light. The dependences of the modulation depth on the intersubband-resonant light polarization and on the interband-resonant light wavelength indicate that the modulation is achieved by this principle. It is pointed out that the thermal effect appears when the power of the intersubband-resonant light becomes strong

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )

Date of Publication:

Jun 1993

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