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On carrier injection and gain dynamics in quantum well lasers

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2 Author(s)
Tessler, Nir ; Dept. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel ; Eistenstein, G.

A detailed carrier dynamics model for quantum well lasers is presented. The model describes the transport of carriers using full continuity equations and the gain by rate equations for each well separately, and it also takes into account electron-hole interactions which modify the energy band structure. To this end, the model includes Poisson and Schrodinger equations. The model is solved in steady state where it yields nonuniform carrier distributions along the crystal growth axis. Dynamically, the model is solved in the time domain, yielding the evolution of carriers in time and space and highlighting a new effect, photon-assisted carrier transport. The model is also solved in the small-signal regime where the phase lag in gain between wells is determined

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )

Date of Publication:

Jun 1993

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