By Topic

Experimental study of Auger recombination, gain, and temperature sensitivity of 1.5 μm compressively strained semiconductor lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Zou, Yao ; Dept., of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA ; Osinski, Julian S. ; Grodzinski, P. ; Dapkus, P.Daniel
more authors

The effect of strain on Auger recombination has been studied using the differential carrier lifetime technique in both lattice matched InGaAs-InP and compressively strained quaternary quantum wells. It is found that Auger recombination is reduced in strained devices. The transparency carrier density and differential gain of both lattice matched and strained devices have been obtained by gain and relative intensity noise measurement. A reduction of the transparency carrier density is observed in the strained device. However, no differential gain increase is seen. The temperature sensitivity of the threshold current density of both lattice matched and strained devices has been fully studied. Physical parameters contributing to the temperature sensitivity of the threshold current density have been separately measured, and it is shown that the change in differential gain with temperature is a dominant factor in determining the temperature sensitivity of both lattice matched and strained devices

Published in:

Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )