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Compressively strained 1.3 μm InAsP/InP and GaInAsP/InP multiple quantum well lasers for high-speed parallel data transmission systems

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5 Author(s)
T. Fukushima ; Furukawa Electric Co. Ltd., Yokohama, Japan ; A. Kasukawa ; M. Iwase ; T. Namegaya
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Turn-on delay times in the pulse response of compressively strained InAsP/InP double-quantum-well (DOW) lasers and GaInAsP/InP multiple-quantum-well (MQW) lasers emitting at 1.3 μm were investigated. DQW lasers with 200-μm cavity length and high-reflection coating achieved both a very low threshold current (1.8 mA) and a small turn-on delay time (200 ps), even under a biasless 30-mA pulse current. Compressively strained or lattice-matched GaInAsP MQW lasers and GaInAsP double-heterostructure (DH) lasers were also fabricated and compared. It was observed that the carrier lifetime was enhanced for InAsP DQW lasers and strained GaInAsP MQW lasers compared to the lattice-matched GaInAsP MQW lasers and conventional double-heterostructure lasers. To explain this increase in the carrier lifetime, the effect of the carrier transport on the carrier lifetime was studied. The additional power penalty due to the laser turn-on delay was simulated and is discussed

Published in:

IEEE Journal of Quantum Electronics  (Volume:29 ,  Issue: 6 )