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1.3 μm InAsyP1-y-InP strained-layer quantum-well laser diodes grown by metalorganic chemical vapor deposition

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5 Author(s)
Kasukawa, A. ; Furukawa Electric Co., Ltd., Yokohama, Japan ; Namegaya, T. ; Fukushima, T. ; Iwai, N.
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The authors have fabricated 1.3-μm InAsP-InP separate-confinement-heterostructure (SCH) strained-layer double-quantum-well (SL-DQW) laser diodes (LDs) by metalorganic chemical vapor deposition (MOCVD). A low threshold current density of 410 A/cm 2 was obtained. The CW threshold current was as low as 1.8 mA at 20°C, and maximum CW operating temperature of 120°C was obtained. These characteristics are almost the same as those of well-designed GaInAsP-InP SL-QW LDs. Further improvement of the characteristics of InAsP-InP LDs is expected by optimizing the device structure

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Quantum Electronics, IEEE Journal of  (Volume:29 ,  Issue: 6 )