Referenced Items are not available for this document.
The device characteristics of a submicrometre GaAs MESFET with low-temperature-grown GaAs passivation are reported. The fabricated device has a high gate-drain breakdown voltage of over 20 V with a maximum drain current of 340 nA/mm and a transconductance of 200 mS/mm. Microwave measurement of the device yields a cutoff frequency of 32 GHz, and an unusually high maximum frequency of oscillation of 110 GHz. These combined characteristics demonstrate the potential of the device as a viable power amplifier in the millimetre-wave frequency range.<
Published in:
Electronics Letters
(Volume:29
,
Issue:
17
)
Date of Publication: 19 Aug. 1993
- Page(s):
- 1550 - 1551
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4504806
- Digital Object Identifier :
- 10.1049/el:19931033
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 19 Aug. 1993
- Sponsored by :
- Institution of Engineering and Technology
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