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Gate length electric parameter dependences of ultra-submicrometre delta -doped pseudomorphic HEMTs

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10 Author(s)

AlGaAs/InGaAs/GaAs MODFETs having 20% indium in the channel and Si planar doping (5*10 12 cm -2) have been fabricated with gate lengths of 0.1-0.7 mu m and a width of 100 mu m. Gates that are longer than 0.2 mu m are T-shaped and the narrower gates (0.1 and 0.15 mu m) are triangular. From DC measurement a maximum G m of 1100 mS/mm has been obtained. The current gain cutoff frequency F t corrected for the access resistances is 145 GHz, corresponding to an intrinsic transition frequency of 220 GHz.<>

Published in:

Electronics Letters  (Volume:29 ,  Issue: 17 )

Date of Publication:

19 Aug. 1993

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