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The elastic properties of PECVD silicon oxynitride films on gallium arsenide

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2 Author(s)
Hickernell, T.S. ; Motorola Inc., Scottsdale, AZ, USA ; Hickernell, F.S.

The elastic constants of low-stress plasma-enhanced chemical vapor deposition (PECVD) grown silicon oxynitride on GaAs are calculated from surface acoustic wave (SAW) measurements. Films from 1000 to 4000 nm in thickness are shown to have very consistent densities and SAW velocity dispersion characteristics. The density of the films is below that of bulk fused quartz, but the elastic moduli are similar to those of fused quartz. The low density indicates that low-temperature PECVD silicon oxynitride is inherently porous compared to an equivalent bulk material

Published in:

Ultrasonics Symposium, 1991. Proceedings., IEEE 1991

Date of Conference:

8-11 Dec 1991