By Topic

Field effect transistor based on a bi-crystal grain boundary Josephson junction

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Ivanov, Z.G. ; Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden ; Stepantsov, E.A. ; Tzalenchuk, A.Ya. ; Shekhter, R.I.
more authors

The authors have developed a planar field effect device consisting of an artificial grain boundary junction in an Y/sub 1/Ba/sub 2/Cu/sub 3/O/sub x/ (YBCO) microbridge which was covered by a 300-nm amorphous SrTiO/sub 3/ layer and a 4- mu m-wide gate electrode. The layers were grown on Y-ZrO/sub 2/ bicrystal. The current transport through the weak link, connecting the superconducting drain and source electrodes, was regulated by the voltage of the insulated gate. Devices with different misorientation angles, theta , between the two halves of the bicrystal were studied. For 45 degrees nonsymmetric tilt grain boundaries, the authors observed a strong (more than 50%) enhancement of the supercurrent at positive gate voltage and almost no change, or a slight decrease, at negative voltage. A theoretical model of the device is discussed. At positive gate voltages of 0.5 V and 8 V about 40% and 70% enchancement of the device critical current, respectively, was obtained.<>

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:3 ,  Issue: 1 )