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Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering

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4 Author(s)
C. J. McLean ; Dept. of Electr. & Electron. Eng., Glasgow Univ., UK ; A. McKee ; J. H. Marsh ; R. M. De La Rue

The retention of high electrical and optical quality in GaInAs/GaInAsP multiquantum well laser material which has been bandgap widened by photoabsorption induced disordering (PAID) has been investigated using photoconducting measurements. On applying a reverse bias, Franz-Keldysh broadening of the exciton features is observed demonstrating that bandgap shifted modulators can be fabricated. Selective area disordering across the wafer using an Au reflection mask is also demonstrated.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 18 )