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Lateral control of the bandgap in GaInAs/GaInAsP MQW structures using photoabsorption-induced disordering

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4 Author(s)
McLean, C.J. ; Dept. of Electr. & Electron. Eng., Glasgow Univ., UK ; McKee, A. ; Marsh, J.H. ; De La Rue, R.M.

The retention of high electrical and optical quality in GaInAs/GaInAsP multiquantum well laser material which has been bandgap widened by photoabsorption induced disordering (PAID) has been investigated using photoconducting measurements. On applying a reverse bias, Franz-Keldysh broadening of the exciton features is observed demonstrating that bandgap shifted modulators can be fabricated. Selective area disordering across the wafer using an Au reflection mask is also demonstrated.

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Electronics Letters  (Volume:29 ,  Issue: 18 )