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High-power and high-temperature operation of eight-element monolithic, 780 nm MQW laser diode array on 50 mu m centres

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7 Author(s)
Shima, A. ; Microwave Devices Lab., Mitsubishi Electr. Corp., Mizuhara Itami, Japan ; Kadowaki, T. ; Miura, T. ; Miyashita, M.
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A 50 mu m-spaced, eight-element individually addressable laser diode array with an AlGaAs multiquantum well (MQW) active layer lasing at around 780 nm has been fabricated. Highly uniform power/current characteristics up to 100 mW per element at 50 degrees C under CW conditions are realised for the first time. Within the array, variations in the operating currents and the beam characteristics such as the divergence and the wavelength are less than +or-4.6% and less than +or-2.2%, respectively.

Published in:

Electronics Letters  (Volume:29 ,  Issue: 18 )