Referenced Items are not available for this document.
A 50 mu m-spaced, eight-element individually addressable laser diode array with an AlGaAs multiquantum well (MQW) active layer lasing at around 780 nm has been fabricated. Highly uniform power/current characteristics up to 100 mW per element at 50 degrees C under CW conditions are realised for the first time. Within the array, variations in the operating currents and the beam characteristics such as the divergence and the wavelength are less than +or-4.6% and less than +or-2.2%, respectively.
Published in:
Electronics Letters
(Volume:29
,
Issue:
18
)
Date of Publication: 2 Sept. 1993
- Page(s):
- 1636 - 1638
- ISSN :
- 0013-5194
- INSPEC Accession Number:
- 4542828
- Digital Object Identifier :
- 10.1049/el:19931090
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- 2 Sept. 1993
- Sponsored by :
- Institution of Engineering and Technology
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
