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A method to etch undoped silicon cantilever beams

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2 Author(s)
W. Choi ; Dept. of Electr. Eng., Boston Univ., MA, USA ; J. G. Smits

A simple method has been designed to etch cantilever beams oriented in the <100> direction on (100) silicon wafers without back-etching, heavily doped boron etch stop, or anodic oxidation etch stop. The scheme requires only two levels of masking. Silicon dioxide and evaporated gold film are used as passivation materials. Anisotropic etching is performed in a sodium hydroxide bath. Silicon cantilevers with background doping concentration levels and having vertical edges are produced

Published in:

Journal of Microelectromechanical Systems  (Volume:2 ,  Issue: 2 )