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The low temperature gating characteristics of thyristors

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3 Author(s)
Menhart, S. ; Dept. of Eng. Technol., Arkansas Univ., Little Rock, AR, USA ; Hudgins, J.L. ; Portnoy, W.M.

The gate threshold current of an inverter thyristor (1300 V, 420 A average) has been measured as a function of decreasing temperature between 25 and -180°C. The simple two transistor thyristor model was used to calculate the temperature dependence of the minimum required gate current by examining the temperature dependencies of the two common-base alphas in the equivalent circuit. The requirements for successful gating of thyristors are examined

Published in:

Industry Applications, IEEE Transactions on  (Volume:29 ,  Issue: 4 )

Date of Publication:

Jul/Aug 1993

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