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A new approach to determine the drain-and-source series resistance of LDD MOSFET's

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2 Author(s)
Chung, S.S.-S. ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Lee, J.-S.

A method for determining the intrinsic drain-and-source series resistance and the effective channel length of LDD MOSFET's is proposed. The method is based on the experimentally measured device I-V characteristics and a new parameter extraction procedure. A consistent set of the effective channel length and the gate-voltage-dependent drain-and-source series resistance was thus determined. The comparison between the measured and experimental drain current characteristics shows excellent agreement using the present model values

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 9 )