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Uniform durable thin dielectrics prepared by rapid thermal processing in an N2O ambient

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2 Author(s)
Bienek, R. ; Dept. of Electr. Eng., Edinburgh Univ., UK ; Nenyei, Z.

Thin dielectrics grown on silicon wafers by rapid thermal processing in an N2O ambient at temperatures of 1100°C, 1150°C, and 1200°C are discussed. The resulting films, in conjunction with an O2 ambient control were characterized by thickness measurements and electrical performance. Dielectrics formed in N2O in this temperature range were all superior to that prepared in an O2 ambient in terms of interface state generation and flatband voltage shift after constant current stressing. Although all N2O prepared samples exhibited similar cross wafer electrical uniformity, higher growth temperatures favored thickness uniformity. The electrical behavior of the N2O wafers was not strongly dependent on growth temperature; however, a 60-s 1100°C post-oxynitridation N2 anneal was found to significantly reduce subsequent electrical performance. It is also demonstrated that under optimum process conditions, high-quality uniform dielectrics can be formed by RTP in N2O

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Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 9 )