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Precise modeling of hot carrier gate current in short-channel MOSFET's

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2 Author(s)
El-Hennawy, A.E. ; Dept. of Phys., King Abdul Aziz Univ., Jeddah, Saudi Arabia ; Mobarek, O.H.

A powerful model which considers the fact that the values of the channel and carrier temperatures T and Tc vary with position in the bulk and channel is considered. It reveals that the energy distribution of hot carriers deviates from the well-known Maxwellian distribution by a small but nonnegligible perturbation and evaluates the dependence of this deviation of the device technology, geometry, and biasing conditions. The model helps to remove important discrepancies between the old hot-carrier models and measurements

Published in:

Electron Devices, IEEE Transactions on  (Volume:40 ,  Issue: 9 )