Referenced Items are not available for this document.
The authors have developed a Very Low Pressure Chemical Vapor Deposition process (VLPCVD) allowing in-situ phosphorous doping and have tried both to control the doping level in a large range and to get a related high conductivity. They show that controlling the deposition parameters allows one to optimize the film conductivity, free carrier mobility, and doping efficiency. This process has been used to fabricate source and drain regions of thin film transistors
Published in:
Poly-Si Devices and Applications, IEE Colloquium on
Date of Conference: 23-24 Mar 1993
- Page(s):
- 10/1 - 10/4
- Meeting Date :
- 23 Mar 1993-24 Mar 1993
- INSPEC Accession Number:
- 4418299
- Conference Location :
- London
- Product Type:
- Conference Publications
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