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In-situ phosphorous doped VLPCVD poly-Si layers for polysilicon thin film transistors

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6 Author(s)

The authors have developed a Very Low Pressure Chemical Vapor Deposition process (VLPCVD) allowing in-situ phosphorous doping and have tried both to control the doping level in a large range and to get a related high conductivity. They show that controlling the deposition parameters allows one to optimize the film conductivity, free carrier mobility, and doping efficiency. This process has been used to fabricate source and drain regions of thin film transistors

Published in:

Poly-Si Devices and Applications, IEE Colloquium on

Date of Conference:

23-24 Mar 1993

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