Cart (Loading....) | Create Account
Close category search window
 

Intractability in linear switch-level simulation

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Huang, L.P. ; Carnegie Mellon Univ., Pittsburgh, PA, USA ; Bryant, R.E.

The linear switch-level model represents a MOS transistor as a voltage-controlled linear resistor and a storage node as a grounded, linear capacitor. For logic simulation, the linear switch-level model offers an attractive tradeoff between resolution/accuracy and computational complexity over gate-level and circuit-level models. However, analysis of MOS networks using the linear switch-level model becomes increasingly difficult in the presence of unknown values, and heuristic methods are often employed. It is shown that the complexity of computing maximum and minimum steady-state voltages of a general MOS network using the linear switch-level model in the presence of unknown values is NP-complete. These results partially justify the use of heuristic methods when unknown values are present

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 6 )

Date of Publication:

Jun 1993

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.