By Topic

Computation of drain and substrate currents in ultra-short-channel nMOSFET's using the hydrodynamic model

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Rahmat, K. ; MIT, Cambridge, MA, USA ; White, J. ; Antoniadis, D.A.

The authors develop a robust and efficient numerical solution of the hydrodynamic model, which solves the energy balance equation, and compare predictions of this model, using one set of parameters, with experimental nMOSFET characteristics for a range of channel lengths down to ultrashort channels. The substrate current is calculated by direct integration of the energy distribution function, which uses the computed temperature to obtain the number of high energy electrons. The drain current calculated using this method is accurate for a range of channel lengths and biases, and correctly predicts the observed enhanced transconductance for ultrashort-channel devices. The substrate current matches the experimental data for a range of channel lengths and biases above threshold with one set of physically reasonable parameters

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 6 )