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A 2-D boundary element method approach to the simulation of DMOS transistors

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4 Author(s)
M. -J. Zhou ; Lab. of Electron., Ghent Univ., Belgium ; H. De Smet ; A. De Bruycker ; A. Van Calster

A boundary element method is introduced for the calculation of two-dimensional potential and electric field distributions in high-voltage DMOS transistors. An algorithm is proposed to determine the dimensions of the depletion layers in two-dimensional geometries. Regions with different permittivities are taken into account using appropriate boundary conditions. As an application, the high-voltage behavior of the DMOS transistors is investigated, and the avalanche breakdown conditions of the transistors are determined by calculating the ionization integral. The results are compared with simulations based on finite difference methods

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:12 ,  Issue: 6 )