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Empirical model of MOSFET breakdown voltages

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1 Author(s)
Mitros, J.C. ; National Semiconductor Co., Austin, TX, USA

An additive model of drain-to-source current of a MOS transistor in the breakdown region is presented for the circuit-simulation SPICE program. An additional drain-to-source current is described by mixed quadratic and exponential formulas. Continuity of current and its first derivatives is assured. This guarantees a convergence of the Newton-Raphson algorithm used in SPICE. Variation of the drain-to-source breakdown voltage at Vgs=0 and of the injection-induced breakdown voltage at Vgs>V th with the gate-to-source voltage and the effective channel length is taken into account. Most of the model parameters have physical meanings and they are easily measurable

Published in:

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:12 ,  Issue: 4 )