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Analytical drain current models for AlGaAs/GaAs MODFET's including subthreshold conduction

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2 Author(s)
V. K. De ; Center for Integrated Electron., Rensselaer Polytechn. Inst., Troy, NY, USA ; J. D. Meindl

Analytical models for self-aligned-gate AlGaAs/GaAs MODFET's that predict static current-voltage characteristics continuously from below to above threshold are presented. The characteristic equations are derived from fundamental device analysis and contain no nonphysical fitting parameters. They are closed-form and describe device behavior explicitly in terms of terminal voltages. The model equations are amenable to modification for incorporating short-channel effects both in the subthreshold and above-threshold operating regimes. Comparisons of model predictions with data from numerical models are presented. In addition to retaining the physical basis of MODFET operation, the models, due to their relative simplicity, promise digital circuit design, analysis, and simulations with accuracy, ease, and efficiency

Published in:

IEEE Journal of Solid-State Circuits  (Volume:28 ,  Issue: 5 )