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Modeling of magnetic-field sensitive devices using circuit simulation tools

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4 Author(s)
A. Salim ; Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada ; T. Manku ; A. Nathan ; W. Kung

An accurate but extremely simple and versatile technique for the analysis of magnetic field sensors is presented. A circuit model which allows simulation of galvanomagnetic carrier transport is developed, and has been successfully applied to a variety of magnetic field sensors, such as Hall-effect devices and bipolar magnetotransistors. This approach is attractive because device analysis and subsequent optimization can be performed in a circuit simulation environment; a feature not available with rigorous numerical approaches.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Date of Conference:

22-25 June 1992