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Effective bond strength of pyrex thin film TE bonds for microstructure applications

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3 Author(s)
Stratton, T.G. ; Sensor & Syst. Dev. Center, Honeywell Inc., Bloomington, MN, USA ; Burns, D.W. ; Speldrich, B.D.

Thermoelectric (TE) bonds between two silicon wafers have been formed using sputtered Pyrex films. The bond area was defined by patterning and etching reliefs into a silicon wafer. The bond geometry was varied from square to circular annuli with varying widths, diameters, and corner rounding. Bond strengths were determined as a faction of bond shape and size. From rupture pressure measurements an empirical statistical model which allows prediction of bond strength as a function of bond geometry has been developed for thin film TE bonds.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1992. 5th Technical Digest., IEEE

Date of Conference:

22-25 June 1992