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Pseudomorphic n-InGaP/InGaAs/GaAs high electron mobility transistors for low-noise amplifiers

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2 Author(s)
Takikawa, Masahiko ; Fujitsu Lab. Ltd., Atsugi, Japan ; Joshin, K.

The authors developed 0.15- mu m-gate pseudomorphic n-InGaP/InGaAs/GaAs HEMTs for low-noise amplifiers. Passivated devices exhibited a noise figure of 0.41 dB with an associated gain of 13.0 dB at 12 GHz including package loss, and of 1.2 dB with an associated gain of 5.8 dB at 50 GHz. Reducing the short-channel effects was the key to achieving the best performance ever reported for passivated and packaged low-noise HEMTs on GaAs substrates. A high aspect ratio under the thin n-InGaP layer and good carrier confinement in the pseudomorphic InGaAs channel reduce the undesirable short-channel effects in these devices.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 8 )