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Tunnel oxide prepared by thermal oxidation of thin polysilicon film on silicon (TOPS)

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3 Author(s)
Shye Lin Wu ; Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan ; Chung Len Lee ; Tan Fu Lei

A textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate is reported. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si-SiO/sub 2/ interface is obtained. The textured interface results in localized high fields and enhances electron injection into TOPS. TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and interface state generation under high-field operation, and a higher asymmetric injection polarity than the normal oxide.<>

Published in:

Electron Device Letters, IEEE  (Volume:14 ,  Issue: 8 )