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A textured tunnel oxide, TOPS, prepared by thermally oxidizing a thin polysilicon film on a Si substrate is reported. Due to the rapid diffusion of oxygen through the grain boundaries of the thin polysilicon into Si substrate and the enhanced oxidation rate at the grain boundaries, a textured Si-SiO/sub 2/ interface is obtained. The textured interface results in localized high fields and enhances electron injection into TOPS. TOPS exhibits a higher electron injection efficiency, a better immunity to the electron trapping and interface state generation under high-field operation, and a higher asymmetric injection polarity than the normal oxide.<
Published in:
Electron Device Letters, IEEE
(Volume:14
,
Issue:
8
)
Date of Publication: Aug. 1993
- Page(s):
- 379 - 381
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 4510971
- Digital Object Identifier :
- 10.1109/55.225585
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Aug. 1993
- Sponsored by :
- IEEE Electron Devices Society
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