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Comments on "An analytical two-dimensional perturbation method to model submicron GaAs MESFET's" [with reply]

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2 Author(s)
N. Kukreja ; Dept. of Electron. Sci., Delhi Univ., New Delhi, India ; R. S. Gupta

The commenter report that they have found serious discrepancies in the above-titled paper by E. Donker and F. C. Jain (ibid., vol.37, no.9, p.1484-7, Sept. 1989). Particularly in the potential expression and the equation governing the current-voltage characteristics of GaAs MESFET. Moreover, they found that the model is valid until the linear regime and not in the saturation regime. Dankor and Jain reply that their results are correct as stated, and they provide further discussion of their work.<>

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IEEE Transactions on Microwave Theory and Techniques  (Volume:41 ,  Issue: 3 )