A 64-GHz f/sub T/ and 3.6-V BV/sub CEO/ Si bipolar transistor using in situ phosphorus-doped and large-grained polysilicon emitter contacts

A high-performance bipolar transistor has been developed using an in-situ phosphorus doped polysilicon (IDP) technique for emitter formation. The transistor demonstrated in ultrahigh current gain of 700, a maximum cutoff frequency f/sub T(max)/ of 64 GHz, and a breakdown voltage between collector and emitter BV/sub CEO/ of 3.6 V. At V/sub CE/ values of 2 and 3 V, a product of f/sub T(max)/ and BV/sub CEO/ of 200 GHz-V has been achieved. This value is nearly equal to the physical limitation for homojunction silicon transistors.<
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